Course Information
SemesterCourse Unit CodeCourse Unit TitleL+PCreditNumber of ECTS Credits

Course Details
Language of Instruction English
Level of Course Unit First Cycle
Department / Program PHYSICS
Mode of Delivery Face to Face
Type of Course Unit Elective
Objectives of the Course The objective of this course is to teach the physics and properties of semiconductors and the basics of solid state device operation and their applications. Also growth techniques and processing films for device purposes are elucidated.
Course Content Introduction to physics and properties of semiconductors. Epitaxial growth, chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Thermal oxidation, dielectric deposition, polysilicon deposition and metalisation. Lithography and etching. Impurity doping, Diffusion process and Ion implantation. Metal interconnections and contact technology: Metal-semiconductor contacts, polysilicon interconnections and silicide formation. Integrated device technology: p-n junction diode, bipolar junction transistor (BJT) Metal-oxide-semiconductor field effect transistors MOSFET technology, MEFET technology .
Course Methods and Techniques
Prerequisites and co-requisities None
Course Coordinator None
Name of Lecturers Prof.Dr. CEM ÇELEBİ
Assistants None
Work Placement(s) No

Recommended or Required Reading

Course Category

Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"

Assessment Methods and Criteria
In-Term Studies Quantity Percentage
Midterm exams 0 % 0
Quizzes 0 % 0
Homeworks 0 % 0
Other activities 0 % 0
Laboratory works 0 % 0
Projects 0 % 0
Final examination 0 % 0
% 0

ECTS Allocated Based on Student Workload
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Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
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Weekly Detailed Course Contents
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Contribution of Learning Outcomes to Programme Outcomes
P1 P2 P3 P4 P5 P6 P7 P8 P9 P10

Contribution: 0: Null 1:Slight 2:Moderate 3:Significant 4:Very Significant